Simulation of gallium arsenide electroluminescence spectra in avalanche breakdown using self-absorption and recombination models
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1447322
Reference20 articles.
1. Verification of electron distributions in silicon by means of hot carrier luminescence measurements
2. Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n+Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
3. Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMTs by means of electroluminescence
4. Hot-carrier luminescence in sub-quartermicrometer high-speed GaAs MESFET's
5. Electroluminescence analysis of HFET's breakdown
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Improved n-type organic transistors by introducing organic heterojunction buffer layer under source/drain electrodes;Applied Physics Letters;2006-07-31
2. Infrared light emission from GaAs MESFETs operating at avalanche breakdown conditions;Semiconductor Science and Technology;2004-03-01
3. Analysis of electroluminescence spectra of silicon and gallium arsenide p–n junctions in avalanche breakdown;Journal of Applied Physics;2004-02-15
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