Metal diffusion properties of ultra-thin high-k Sc2O3 films-Reference-Cited by-同舟云学术

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Metal diffusion properties of ultra-thin high-k Sc2O3 films

Published:2017-10 Issue:10 Volume:7 Page:105324
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Pachecka M.¹^ORCID,Lee C. J.¹²^ORCID,Sturm J. M.¹,Bijkerk F.¹^ORCID

Affiliation:

1. Industrial Focus Group XUV Optics, MESA+ Institute for Nanotechnology, University of Twente, Drienerlolaan 5, 7522NB Enschede, The Netherlands

2. Quantum Transport of Matter Group, MESA+ Institute for Nanotechnology, University of Twente, Drienerlolaan 5, 7522NB Enschede, The Netherlands

Funder

CP3E I23

Focus Group IFG-XUV

Nanonext 9B NNXT 9B04

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5000030

Reference24 articles.

1. Extended defects in epitaxial Sc2O3 films grown on (111) Si

2. Ternary rare-earth metal oxide high-k layers on silicon oxide

3. Dielectric polarizabilities of ions in oxides and fluorides

4. Thermal stability of lanthanum scandate dielectrics on Si(100)

5. Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

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3. A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga₂O₃, Al₂O₃, In₂O₃, ZnO, SnO₂, CdO, NiO, CuO, and Sc₂O₃;Applied Physics Reviews;2022-03

4. Study the Sensing Performance with Catalytic Metals of Passivated InAlN/GaN Schottky Diode Gas Sensor;2022 IEEE VLSI Device Circuit and System (VLSI DCS);2022-02-26

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