Quantum-interference characteristics of a 25 nm trench-type InGaAs/InAlAs quantum-wire field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1434304
Reference19 articles.
1. Single quantum wire semiconductor lasers
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3. Crystallographic selective growth of GaAs by atomic layer epitaxy
4. Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates
5. Quantized conductance in a heterostructurally defined Ga0.25In0.75As/InP quantum wire
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