Electric field induced parallel conduction in GaAs/AlGaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347713
Reference15 articles.
1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
2. Time dependence of current at high electric fields in AlxGa1−xAs-GaAs heterojunction layers
3. Differential negative resistance caused by inter-subband scattering in a 2-dimensional electron gas
4. Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors
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4. Electro-Optical Effects to Visualize Field and Current Distributions in Semiconductors;Springer Series in Solid-State Sciences;2010
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