n-type high-conductive epitaxial diamond film prepared by gas source molecular beam epitaxy with methane and tri-n-butylphosphine
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119922
Reference14 articles.
1. Growth of boron‐doped diamond seed crystals by vapor deposition
2. Properties of Boron-Doped Epitaxial Diamond Films
3. Boron-Doped Homoepitaxial Diamond Layers: Fabrication, Characterization, and Electronic Applications
4. N-Type Doping and Diffusion of Impurities in Diamond
5. Nitrogen and potentialn-type dopants in diamond
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