Semi‐insulating properties and photoluminescence quenching in Cu‐diffused InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354372
Reference19 articles.
1. Semi-Insulating InP:Cu
2. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
3. Transition metal impurities in InP : Defect complexes and native defects
4. Indium Phosphide
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1. Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences;Materials Science in Semiconductor Processing;2005-08
2. Urbach Tail in InP with Nanometer Metallic Precipitates;physica status solidi (a);1998-08
3. Photoluminescence of InP:Zn;Journal of Applied Spectroscopy;1997-01
4. Carrier dynamics in InP with metallic precipitates;Applied Physics Letters;1996-12-02
5. Transient Photoconductivity and Photoluminescence in InP:Cu;Acta Physica Polonica A;1996-11
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