Direct measurement of the carrier leakage in an InGaAsP/InP laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93841
Reference7 articles.
1. Direct observation of electron leakage in InGaAsP/InP double heterostructure
2. Band‐gap enhanced carrier heating in InGaAsP/InP double heterostructure light‐emitting diodes
3. Evidence for Auger and free‐carrier losses in GaInAsP/InP lasers: Spectroscopy of a short wavelength emission
4. Mode stabilized terrace InGaAsP lasers on semi‐insulating InP
5. Analysis of threshold temperature characteristics for InGaAsP/InP double heterojunction lasers
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1. Carrier recombination processes in MOVPE and MBE grown 1.3 μm GaInNAs edge emitting lasers;Solid-State Electronics;2003-03
2. Characterization of 1.3-um wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low temperature and high pressure;Materials and Devices for Optical and Wireless Communications;2002-08-30
3. A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers;IEEE Journal of Selected Topics in Quantum Electronics;2002-07
4. Role of p-doping profile and regrowth on the static characteristics of 1.3-μm MQW InGaAsP-InP lasers: experiment and modeling;IEEE Journal of Quantum Electronics;1999
5. The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers;IEEE Journal of Selected Topics in Quantum Electronics;1999
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