Tuning the electronic properties of epitaxial strained CaFeO3−δ thin films-Reference-Cited by-同舟云学术

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Tuning the electronic properties of epitaxial strained CaFeO3−δ thin films

Published:2019-06-03 Issue:22 Volume:114 Page:221907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Tongtong¹,Wang Yujia¹,Li Haobo¹,Wang Meng¹,Lyu Yingjie¹,Shen Shengchun¹,Lu Nianpeng¹,He Qing²,Yu Pu¹³

Affiliation:

1. State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China

2. Department of Physics, Durham University, Durham DH13LE, United Kingdom

3. RIKEN Center for Emergent Matter Science (CEMS), Saitama 351-0198, Japan

Funder

Beijing Advanced Innovation Center for Future Chip

National Natural Science Foundation of China

Engineering and Physical Sciences Research Council

National Basic Research Program of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5098025

Reference35 articles.

1. Nanostructured materials for advanced energy conversion and storage devices

2. Resistive switching in transition metal oxides

3. Tuning electronic structure via epitaxial strain in Sr2IrO4 thin films

4. Control of the magnetic and magnetotransport properties of La0.67Sr0.33MnO3 thin films through epitaxial strain

5. Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain

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