Room temperature coherence properties and 14N nuclear spin readout of NV centers in 4H–SiC

Abstract

We have investigated the room temperature spin coherence properties of the axial NVkk center in 4H–SiC by pulsed high-frequency electron spin resonance and electron-nuclear double resonance techniques. Our results show a remarkable phase coherence time (TCoherence) of 25.3 μs at room temperature for ensembles of NV centers. We demonstrate precise control over NV defect spins through Rabi oscillations, which exhibit a linear response to microwave power. Additionally, the demonstrated room temperature readout of the intrinsic 14N nuclear spin (I = 1) underscores its potential as a robust nuclear spin memory resource, further positioning NV defects in 4H–SiC as an advanced platform for implementing cutting-edge quantum technologies in semiconductor systems.