Carrier transport in ordered and disordered In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118214
Reference9 articles.
1. Comparative study of atomic ordering and alloy clustering in InGaP crystals grown by metalorganic vapor phase epitaxy, chloride‐vapor phase epitaxy, and liquid phase epitaxy
2. Control of ordering in GaInP and effect on bandgap energy
3. Atomic ordering and domain structures in metal organic chemical vapor deposition grown InGaAs (001) layers
4. Band‐gap narrowing in ordered Ga0.47In0.53As
5. Mechanism for spatial separation of charge carriers in inhomogeneous semiconductor alloys
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3. InGaAsP/InGaAs tandem cells for a solar cell configuration with more than three junctions;physica status solidi (RRL) - Rapid Research Letters;2008-12
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5. Evidence of interface-induced persistent photoconductivity in InP∕In0.53Ga0.47As∕InP double heterostructures grown by molecular-beam epitaxy;Applied Physics Letters;2005-07-18
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