Tip geometry effects in dopant profiling by scanning microwave microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3686748
Reference11 articles.
1. Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors
2. Mechanism of bias-dependent contrast in scanning-capacitance-microscopy images
3. The physical principles of scanning capacitance spectroscopy
4. Quantitative scanning capacitance spectroscopy
5. Advances in experimental technique for quantitative two-dimensional dopant profiling by scanning capacitance microscopy
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