Effect of strain on ferroelectric field effect in strongly correlated oxide Sm0.5Nd0.5NiO3-Reference-Cited by-同舟云学术

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Effect of strain on ferroelectric field effect in strongly correlated oxide Sm0.5Nd0.5NiO3

Published:2015-10-12 Issue:15 Volume:107 Page:152906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang L.¹,Chen X. G.¹,Gardner H. J.¹,Koten M. A.²,Shield J. E.²³,Hong X.¹³

Affiliation:

1. Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA

2. Department of Mechanical Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA

3. Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA

Funder

Nebraska Research Initiative

National Science Foundation (NSF)

Semiconductor Research Corporation (SRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4934182

Reference37 articles.

1. Electrostatic modification of novel materials

2. Magnetoelectric Devices for Spintronics

3. Epitaxial all‐perovskite ferroelectric field effect transistor with a memory retention

4. Electrostatic Modulation of Superconductivity in Ultrathin GdBa 2 Cu 3 O 7-x Films

5. Electric-Field-Effect Modulation of the Transition Temperature, Mobile Carrier Density, and In-Plane Penetration Depth ofNdBa2Cu3O7−δThin Films

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