Sensitivity of resistive and Hall measurements to local inhomogeneities: Finite-field, intensity, and area corrections-Reference-Cited by-同舟云学术

Sensitivity of resistive and Hall measurements to local inhomogeneities: Finite-field, intensity, and area corrections

Published:2014-10-07 Issue:13 Volume:116 Page:133706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Koon Daniel W.¹,Wang Fei²,Petersen Dirch Hjorth³,Hansen Ole³⁴

Affiliation:

1. Physics Department, St. Lawrence University, Canton, New York 13617, USA

2. Department of Electronic and Electrical Engineering, South University of Science and Technology of China (SUSTC), Shenzhen 518055, China

3. Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345 East, DK-2800 Kongens Lyngby, Denmark

4. Danish National Research Foundation's Center for Individual Nanoparticle Functionality (CINF), Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark

Funder

St. Lawrence University

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896947

Reference18 articles.

1. Sensitivity of resistive and Hall measurements to local inhomogeneities

2. Resistivity Measurements on Germanium for Transistors

3. Measurement of Sheet Resistivities with the Four-Point Probe

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