Determination of the dispersion of the index of refraction and the elastic moduli for molecular-beam-epitaxy-grown Zn1−xBexSe alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1379356
Reference9 articles.
1. Issues of II–VI molecular-beam epitaxy growth toward a long lifetime blue/green laser diode
2. Molecular‐beam epitaxy of beryllium‐chalcogenide‐based thin films and quantum‐well structures
3. Laser diodes based on beryllium-chalcogenides
4. Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates
5. Integrated optics and new wave phenomena in optical waveguides
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1. Near-forward Raman selection rules for the phonon-polariton in (Zn, Be)Se alloys;Journal of Applied Physics;2016-11-14
2. Near-forward/high-pressure-backward Raman study of Zn1 − x Be x Se (x ~ 0.5) - evidence for percolation behavior of the long (Zn―Se) bond;Journal of Raman Spectroscopy;2015-10-15
3. Near-forward Raman scattering by bulk and surface phonon-polaritons in the model percolation-type ZnBeSe alloy;Applied Physics Letters;2013-08-12
4. Dependence of nonlinear refractive index of ZnSe on Be and Mg content;Opto-Electronics Review;2010-01-01
5. Optically pumped ultraviolet lasing of BeMgZnSe based quantum well laser structures;physica status solidi (c);2006-03
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