The annealing effects on ZnCdSe/ZnSe quantum wells and ZnSe/GaAs interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368878
Reference18 articles.
1. 100 h II-VI blue-green laser diode
2. High resolution transmission electron microscopy determination of Cd diffusion in single quantum well structures
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4. An optical study of interdiffusion in ZnSe/ZnCdSe
5. Thermal stability of (Zn,Cd)(Se,S) heterostructures grown on GaAs
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1. Observation of a non-constant Cd diffusion coefficient during the thermal annealing of Zn1-Cd Se quantum wells;Journal of Alloys and Compounds;2020-12
2. Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure;Semiconductor physics, quantum electronics and optoelectronics;2010-04-30
3. Methods to spectrally tune II-VI-based monolithic microcavities;physica status solidi (b);2010-03-26
4. Post-growth process relaxation properties of strained Cd[sub 0.92]Zn[sub 0.08]Te/Cd[sub 0.83]Zn[sub 0.17]Te quantum well heterostructures grown by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
5. Chemical and structural aspects of annealed ZnSe/GaAs(001) heterostructures;Journal of Applied Physics;2002-10
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