The role of absorption in x‐ray diffraction measurements from epitaxial layers and substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346808
Reference11 articles.
1. Polarity determination of single‐crystal epitaxial layers by x‐ray diffraction
2. Angle calculations for 3- and 4-circle X-ray and neutron diffractometers
3. Polarity determination by diffraction from planes inclined to an extended crystal face
4. Laser alignment of a crystal face perpendicular to an axis of rotation
5. The geometry of X-ray diffraction from extended-face single crystals
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1. Polarity determination and control of SiC grown on Si;Materials Science and Engineering: B;2009-11
2. X-ray analysis of thin films and multilayers;Reports on Progress in Physics;1996-11-01
3. X-RAY CHARACTERISATION OF II-VI SEMICONDUCTOR MATERIALS;II-VI Semiconductor Compounds;1993-05
4. X-ray integrated intensities from semiconductor substrates and epitaxic layers – a comparison of kinematical and dynamical theories with experiment;Acta Crystallographica Section A Foundations of Crystallography;1993-01-01
5. Structural aspects of MOCVD-grown Hg1−xCdxTe layers on novel GaAs substrates;Acta Crystallographica Section A Foundations of Crystallography;1991-03-01
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