Critical switching current and thermal stability of magnetic tunnel junctions with uncompensated CoFeB/Ru/CoFeB synthetic free layers-Reference-Cited by-同舟云学术

Critical switching current and thermal stability of magnetic tunnel junctions with uncompensated CoFeB/Ru/CoFeB synthetic free layers

Published:2013-03-07 Issue:9 Volume:113 Page:093906
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Young Lee Tae,Ahn Chiyui,Min Byoung-Chul,Shin Kyung-Ho,Min Lee Jong,Lee Kyung-Jin,Ho Lim Sang,Park Seung-Young,Jo Younghun,Langer Jürgen,Ocker Berthold,Maass Wolfram

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4794340

Reference21 articles.

1. Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

2. Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer

3. Evaluation of Spin-Transfer Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

4. Magnetic Tunnel Junctions for Spintronic Memories and Beyond

5. Current-Induced Magnetization Switching in MgO Barrier Magnetic Tunnel Junctions With CoFeB-Based Synthetic Ferrimagnetic Free Layers

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