Interfacial symmetry breaking induced spin-orbit coupling in wurtzite GaN nanowires-Reference-Cited by-同舟云学术

Interfacial symmetry breaking induced spin-orbit coupling in wurtzite GaN nanowires

Published:2021-03-22 Issue:12 Volume:118 Page:122104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Xingchen¹^ORCID,Guan Hongming¹,Tang Ning¹²^ORCID,Lv Yuanjie³^ORCID,Chen Ling¹,Zhang Xiaoyue¹,Zhang Shixiong¹,Zhang Yunfan¹,Wang Xinqiang¹²^ORCID,Ge Weikun¹,Shen Bo¹²

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

2. Frontiers Science Center for Nano-optoelectronics and Collaborative Innovation Center of Quantum Matter, Peking University, Beijing 100871, China

3. National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0042776

Reference23 articles.

1. Ultralong spin lifetimes in one-dimensional semiconductor nanowires

2. Electron spin dynamics in mesoscopic GaN nanowires

3. Weak (anti)localization in tubular semiconductor nanowires with spin-orbit coupling

4. Strong and Tunable Spin−Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires

5. Piezotronic Effect on Rashba Spin–Orbit Coupling in a ZnO/P3HT Nanowire Array Structure

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spin injection, relaxation, and manipulation in GaN-based semiconductors;Advances in Physics: X;2023-01-12

2. Piezoelectric manipulation of spin–orbit coupling in a Wurtzite heterostructure;Physical Chemistry Chemical Physics;2023