The overheating effects in germanium quantum well with two subbands occupied-Reference-Cited by-同舟云学术

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The overheating effects in germanium quantum well with two subbands occupied

Published:2018-08 Issue:8 Volume:44 Page:797-802
ISSN:1063-777X
Container-title:Low Temperature Physics
language:en
Short-container-title:Low Temperature Physics

Author:

Berkutov I. B.¹²³,Andrievskii V. V.¹²,Kolesnichenko Yu. A.¹,Komnik Yu. F.¹,Mironov O. A.²⁴

Affiliation:

1. B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, 47 Nauky Ave., Kharkiv 61103, Ukraine

2. Institute of Low Temperature and Structure Research, Polish Academy of Sciences ul. Okólna 2, 50-422, Wroclaw, Poland

3. Department of Physics, North Carolina State University, Raleigh, NC 27695, USA

4. Department of Physics, University of Warwick, Coventry CV4 7AL, UK

Publisher

AIP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5049161

Reference15 articles.

1. Study of overheating effects in SiGe-based p-type heterostructures: Methods of the hole temperature determination

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