Bismuth‐ and thallium‐doped lead telluride grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343593
Reference23 articles.
1. MBE techniques for IV–VI optoelectronic devices
2. Growth and characterization of lead-tin-ytterbium-telluride for diode lasers
3. Wavelength coverage of lead‐europium‐selenide‐telluride diode lasers
4. Lead salt quantum well diode lasers
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