Electrical activation of the ion-implanted phosphorus in 4H-SiC by excimer laser annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1565190
Reference7 articles.
1. Annealing of implantation damage and redistribution of impurities in SiC using a pulsed excimer laser
2. Activation of ion implanted dopants in α‐SiC
3. Excimer Laser Annealing of Ion-Implanted 6H-Silicon Carbide
4. Nonequilibrium solid solutions obtained by heavy ion implantation and laser annealing
5. Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC
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1. Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers;Materials Science in Semiconductor Processing;2024-05
2. Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC);ACS Applied Electronic Materials;2022-09-01
3. Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption;Micromachines;2022-05-21
4. Device Processing Chain and Processing SiC in a Foundry Environment;Wide Bandgap Semiconductors for Power Electronics;2021-10-29
5. Pulsed Laser Annealing of Phosphorous-Implanted 4H-SiC: Electrical and Structural Characteristics;Journal of Electronic Materials;2021-10-18
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