Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices

Published:2017-01-28 Issue:4 Volume:121 Page:044501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Vyas P. B.¹,Naquin C.²^ORCID,Edwards H.²,Lee M.³,Vandenberghe W. G.⁴,Fischetti M. V.⁴^ORCID

Affiliation:

1. Department of Electrical Engineering, The University of Texas at Dallas, 800 W. Campbell Rd., Richardson, Texas 75080, USA

2. Texas Instruments Inc., Richardson, Texas 75243, USA

3. Department of Physics, The University of Texas at Dallas, 800 W. Campbell Rd., Richardson, Texas 75080, USA

4. Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W. Campbell Rd., Richardson, Texas 75080, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4974469

Reference31 articles.

1. New Phenomenon in Narrow Germaniump−nJunctions

2. Discovery of the tunnel diode

3. Resonant tunneling in semiconductor double barriers

4. New negative differential resistance device based on resonant interband tunneling

5. Interband tunneling in polytype GaSb/AlSb/InAs heterostructures

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Channel Length Scaling Limit for LDMOS Field-Effect Transistors: Semi-classical and Quantum Analysis;2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD);2020-09

2. Master-Equation Study of Quantum Transport in Realistic Semiconductor Devices Including Electron-Phonon and Surface-Roughness Scattering;Physical Review Applied;2020-01-31

3. Negative differential conductivity in liquid aluminum from real-time quantum simulations;The European Physical Journal B;2018-10

4. An FET With a Source Tunneling Barrier Showing Suppressed Short-Channel Effects for Low-Power Applications;IEEE Transactions on Electron Devices;2018-03

5. Positive and negative gain exceeding unity magnitude in silicon quantum well metal-oxide-semiconductor transistors;Applied Physics Letters;2017-10-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3