Publisher's Note: “Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)” [Appl. Phys. Lett. <b>122</b>, 243503 (2023)]-Reference-Cited by-同舟云学术

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Publisher's Note: “Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)” [Appl. Phys. Lett. 122, 243503 (2023)]

Published:2023-08-07 Issue:6 Volume:123 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Tetzner H.¹^ORCID,Seifert W.¹,Skibitzki O.¹^ORCID,Yamamoto Y.¹^ORCID,Lisker M.¹,Mirza M. M.²,Fischer I. A.³^ORCID,Paul D. J.²^ORCID,Seta Monica De⁴^ORCID,Capellini G.¹⁴^ORCID

Affiliation:

1. IHP-Leibniz-Institut für Innovative Mikroelektronik 1 , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

2. James Watt School of Engineering, University of Glasgow 2 , Rankine Building, Oakfield Avenue, Glasgow G12 8LT, United Kingdom

3. Experimentalphysik und Funktionale Materialien, BTU Cottbus-Senftenberg 3 , Erich-Weinert-Straße 1, 03046 Cottbus, Germany

4. Dipartimento di Scienze, Università Roma Tre 4 , Viale G. Marconi 446 Roma 00146, Italy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0169378/18075002/069901_1_5.0169378.pdf

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