Dielectric constant and leakage of BaZrO3 films-Reference-Cited by-同舟云学术

Dielectric constant and leakage of BaZrO3 films

Published:2009-04-13 Issue:15 Volume:94 Page:152903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Łupina G.,Dąbrowski J.,Dudek P.,Kozłowski G.,Zaumseil P.,Lippert G.,Fursenko O.,Bauer J.,Baristiran C.,Costina I.,Müssig H.-J.,Oberbeck L.,Schröder U.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3110970

Reference13 articles.

1. Material Engineering of High-k Gate Dielectrics

2. Gate Dielectrics and MOS ULSIs

3. Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

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