Silicon anisotropy in a bi-dimensional optomechanical cavity

Author:

Kersul Cauê M.1ORCID,Benevides RodrigoORCID,Moraes Flávio1ORCID,de Aguiar Gabriel H. M.1ORCID,Wallucks Andreas2ORCID,Gröblacher Simon2ORCID,Wiederhecker Gustavo S.1ORCID,Mayer Alegre Thiago P.1ORCID

Affiliation:

1. Gleb Wataghin Physics Institute, University of Campinas 1 , 13083-859 Campinas, SP, Brazil

2. Kavli Institute of Nanoscience, Department of Quantum Nanoscience, Delft University of Technology 2 , Delft, The Netherlands

Abstract

In this work, we study the effects of mechanical anisotropy in a 2D optomechanical crystal geometry. We fabricate and measure devices with different orientations, showing the dependence of the mechanical spectrum and the optomechanical coupling on the relative angle of the device to the crystallography directions of silicon. Our results show that the device orientation strongly affects its mechanical band structure, which makes the devices more susceptible to orientation fabrication imperfections. Finally, we show that our device is compatible with cryogenic measurements, reaching a ground state occupancy of 0.25 phonons at mK temperature.

Publisher

AIP Publishing

Subject

Computer Networks and Communications,Atomic and Molecular Physics, and Optics

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