Measurement of single interface trap capture cross sections with charge pumping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119177
Reference5 articles.
1. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
2. Observation of single interface traps in submicron MOSFET's by charge pumping
3. Characterization of individual interface traps with charge pumping
4. A reliable approach to charge-pumping measurements in MOS transistors
5. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
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1. Detection of individual spin species via frequency-modulated charge pumping;Applied Physics Letters;2022-01-31
2. Detection and Characterization of Single Defects in MOSFETs;Noise in Nanoscale Semiconductor Devices;2020
3. Oxide Trap-Induced RTS in MOSFETs;Noise in Nanoscale Semiconductor Devices;2020
4. Charge Pumping Under Spin Resonance in Si(100) Metal-Oxide-Semiconductor Transistors;Physical Review Applied;2019-06-27
5. Two Types of ${E}^{\prime}$ Centers as Gate Oxide Defects Responsible for Hole Trapping and Random Telegraph Signals in pMOSFETs;IEEE Transactions on Electron Devices;2018-10
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