Nature of the power-dependent ultrafast relaxation process of photoexcited charge carriers in II-VI semiconductor quantum dots: Effects of particle size, surface, and electronic structure-Reference-Cited by-同舟云学术

Nature of the power-dependent ultrafast relaxation process of photoexcited charge carriers in II-VI semiconductor quantum dots: Effects of particle size, surface, and electronic structure

Published:1998-02 Issue:5 Volume:108 Page:2143-2151
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Roberti Trevor W.,Cherepy Nerine J.,Zhang Jin Z.

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.475593

Reference55 articles.

1. The Quantum Mechanics of Larger Semiconductor Clusters ("Quantum Dots")

2. Perspectives on the Physical Chemistry of Semiconductor Nanocrystals

3. Nanometer-sized semiconductor clusters: materials synthesis, quantum size effects, and photophysical properties

4. Ultrafast Studies of Electron Dynamics in Semiconductor and Metal Colloidal Nanoparticles: Effects of Size and Surface

5. Electron–electron and electron‐hole interactions in small semiconductor crystallites: The size dependence of the lowest excited electronic state

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