InAs nanowires and whiskers grown by reaction of indium with GaAs-Reference-Cited by-同舟云学术

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InAs nanowires and whiskers grown by reaction of indium with GaAs

Published:2003-05-26 Issue:21 Volume:82 Page:3749-3751
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

He Maoqi,Fahmi M. M. E.,Mohammad S. Noor,Jacobs Randolph N.,Salamanca-Riba Lourdes,Felt Frederick,Jah Muzar,Sharma Ashok,Lakins Darryl

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1578519

Reference14 articles.

1. Positively charged defects associated with self-assembled quantum dot formation

2. Positively charged defects associated with self-assembled quantum dot formation

3. Polarization dependent photocurrent spectroscopy of InAs/GaAs quantum dots

4. Polarization dependent photocurrent spectroscopy of InAs/GaAs quantum dots

5. Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy

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