Characterization of GaAs and Si by a microwave photoconductance technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337257
Reference8 articles.
1. Non-Destructive Determination of Cr Concentration Distribution in Cr Doped Semi-Insulating GaAs Substrates
2. Microwave contactless technique for photoconductivity measurements
3. Non-destructive characterization of electrical uniformity in semi-insulating GaAs substrates by microwave photoconductance technique
4. Inhomogeneity in Semi-Insulating GaAs Revealed by Scanning Leakage Current Measurements
5. Leakage CurrentILVariation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAs
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