Direct preparation of standard functional interfaces in oxide heterostructures for 2DEG analysis through beam-induced platinum contacts-Reference-Cited by-同舟云学术

Direct preparation of standard functional interfaces in oxide heterostructures for 2DEG analysis through beam-induced platinum contacts

Published:2018-09-24 Issue:13 Volume:113 Page:131603
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Amoresi Rafael A. C.¹^ORCID,Cichetto Leonélio²³,Kundu Swarup¹^ORCID,Teodoro Marcio D.⁴,Marques Gilmar E.⁴,Longo Elson²^ORCID,Andrés Juan³,Chiquito Adenilson J.⁴,Zaghete Maria A.¹

Affiliation:

1. LIEC—Chemistry Institute, São Paulo State University—UNESP, 14800-060 Araraquara, SP, Brazil

2. LIEC—Department of Chemistry, Universidade Federal de São Carlos—UFSCAR, 13565-905 São Carlos, SP, Brazil

3. Department of Analytical and Physical Chemistry, University Jaume I (UJI), Castelló 12071, Spain

4. Department of Physics, Universidade Federal de São Carlos—UFSCAR, 13565-905 São Carlos, SP, Brazil

Funder

Generalitat Valenciana

Fundação de Amparo à Pesquisa do Estado de São Paulo

Ministerio de Economía y Competitividad

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5046093

Reference33 articles.

1. Size effects on electron-electron interactions in GaAs-AlxGa1−xAs heterostructures

2. New MBE buffer used to eliminate backgating in GaAs MESFETs

3. Insulating phase of a two-dimensional electron gas in MgxZn1−xO/ZnO heterostructures belowν=13

4. High-mobility electrons in SrTiO3 heterostructures

5. Giant photovoltaic effects driven by residual polar field within unit-cell-scale LaAlO3 films on SrTiO3

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