Computer simulation and analytical models for the time‐of‐flight experiment in amorphous silicon thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343207
Reference7 articles.
1. Dispersive (non-Gaussian) transient transport in disordered solids
2. Anomalous transit-time dispersion in amorphous solids
3. A physical interpretation of dispersive transport in disordered semiconductors
4. Photocurrent Transient Spectroscopy: Measurement of the Density of Localized States ina-As2Se3
5. Impurity effects ina‐Si:H solar cells due to air, oxygen, nitrogen, phosphine, or monochlorosilane in the plasma
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Theory of amorphous silicon solar cell (b): a five layer analytical model;Solar Energy Materials and Solar Cells;2003-09
2. Theory of amorphous silicon solar cell (a): numerical analysis;Solar Energy Materials and Solar Cells;2003-09
3. Internal and external characteristics in transient forward bias simulations of a-Si:H devices;Journal of Non-Crystalline Solids;1995-11
4. Review of the Simulation of Transient Experiments on Amorphous Silicon Hydride;MRS Proceedings;1992
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