A new silicon‐on‐insulator structure using a silicon molecular beam epitaxial growth on porous silicon

Author:

Konaka Shinsuke,Tabe Michiharu,Sakai Tetsushi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 55 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Numerical analysis of film‐loaded silicon nanowire optical rectangular waveguide: an effective optical sensing;Micro & Nano Letters;2018-09

2. Porous Silicon as Substrate for Epitaxial Films Growth;Porous Silicon: From Formation to Applications: Optoelectronics, Microelectronics, and Energy Technology Applications, Volume Three;2016-01-07

3. Electrical Isolation Applications of PSi in Microelectronics;Porous Silicon: From Formation to Applications: Optoelectronics, Microelectronics, and Energy Technology Applications, Volume Three;2016-01-07

4. Effect of Substrate's Surface Oxidation State on Optical Absorption Property of Au/Si-NPA;Advanced Materials Research;2014-04

5. Micro-Raman spectroscopy stress measurement method for porous silicon film;Optics and Lasers in Engineering;2010-11

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