Selenium implantation in indium phosphide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329288
Reference9 articles.
1. Implantation and PH 3 Ambient Annealing of InP
2. Pulse electron annealing of ion‐implanted InP
3. Ion implantation of sulfur in Cr‐doped InP at room temperature
4. Ion‐implantedn‐ andp‐type layers in InP
5. The effect of implant temperature on the electrical characteristics of ion implanted indium phosphide
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. CHANNELING AND TEM ANALYSIS OF RADIATION DAMAGE IN ION IMPLANTED AND PULSE ELECTRON BEAM ANNEALED InP;Ion Beam Modification of Materials;1996
2. Lattice location and electrical activity of Ge co‐implanted with P into InP;Applied Physics Letters;1994-01-17
3. Influence of dose rate and temperature on the accumulation of Si‐implantation damage in indium phosphide;Applied Physics Letters;1993-04-05
4. The effect of implant temperature and beam flux on damage accumulation and Si activation of Si-implanted InP;Canadian Journal of Physics;1992-10-01
5. The lattice location of ion‐implanted Ga, Ge, and Se in InP;Journal of Applied Physics;1992-02-15
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