Enhanced piezoelectric properties and domain morphology under alternating current electric field poled in [001]-oriented PIN-PMN-PT single crystal

Author:

Song Kexin12ORCID,Ma Ming1,Hu Qingyuan1,Qiao Liao1,Zhao Jinyan1,Qiu Chaorui1,Liu Jinfeng1ORCID,Luan Peng12,Guo Haisheng12,Li Fei12,Li Zhenrong1ORCID,Fan Shiji1ORCID,Xu Zhuo12

Affiliation:

1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China

2. Jiangsu Blue Whale New Materials Co., Ltd., Zhenjiang 212211, China

Abstract

The piezoelectric and dielectric properties of PMN-PT single crystals were significantly enhanced by alternating current electric field poling (ACP). In this work, to investigate the mechanisms of piezoelectric performance enhancement in relaxor ferroelectric single crystals by ACP, a [001]-oriented PIN-PMN-PT single crystal with a diameter of 3 in was grown by the modified Bridgman method, and a series of single crystal samples within 100 mm of the height of the crystal boule were prepared. Compared with their direct current electric field poling (DCP) counterparts, the electrical properties of single crystal samples at different heights by ACP were regularly enhanced. The piezoelectric coefficient d33 and the dielectric constant ɛ33 of the rhombohedral samples both increased by nearly 20%. Based on the results of polarized light microscopy, the domain wall in [001]-poled ACP samples could not be observed along the [001] direction. The brightness of polarized light propagating along the [010] orientation was enhanced after ACP. The domain images of {100} in the DCP and ACP samples were observed by piezoelectric force microscopy. The results showed that the domain size of ACP samples increased. The existence of layered domains can be clearly found in the scanning electron microscopy results of the stress fracture surface of the ACP sample. According to the analysis, the improvement of the piezoelectric performance in ACP samples comes from the elimination of the 71° domain walls. This work demonstrates that certain ACPs can regulate the domain structure and steadily improve the piezoelectric properties of R-phase PIN-PMN-PT single crystals.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

National Key Research and Development Program of China

Overseas Expertise Introduction Project for Discipline Innovation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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