Author:
Chen X. D.,Fung S.,Beling C. D.,Gong M.,Henkel T.,Tanoue H.,Kobayashi N.
Subject
General Physics and Astronomy
Reference28 articles.
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3. Boron-related deep centers in 6H-SiC
4. Al and B ion‐implantations in 6H‐ and 3C‐SiC
5. Doping of SiC by Implantation of Boron and Aluminum
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