Capacitance‐voltage characteristics of amorphous silicon thin‐film transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344134
Reference6 articles.
1. A self-alignment process for amorphous silicon thin film transistors
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5. Theoretical modeling of amorphous silicon‐based alloyp‐i‐nsolar cells
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