Intersubband absorption in strained InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100843
Reference7 articles.
1. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
2. Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides
3. Observation of Stark shifts in quantum well intersubband transitions
4. Intersubband relaxation in GaAs-AlxGa1−xAs quantum well structures observed directly by an infrared bleaching technique
5. InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ=4.4 μm
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1. Momentum relaxation time and temperature dependence of electron mobility in semiconductor superlattices consisting of weakly interacting quantum wells;Semiconductors;1999-10
2. Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers;Journal of Electronic Materials;1999-05
3. Analysis of mechanisms for electron scattering in GaAs/AlxGa1−x As superlattices with doped quantum wells for longitudinal resonant current flow in high electric fields and at low temperatures;Semiconductors;1999-04
4. Characterisation of p-doped InGaAs/AlGaAs quantum wells for infrared photodetector application;Journal of Crystal Growth;1999-03
5. Chapter 4 Quantum Well Infrared Photodetector (QWIP) Focal Plane Arrays;Semiconductors and Semimetals;1999
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