Room temperature on-wafer ballistic graphene field-effect-transistor with oblique double-gate-Reference-Cited by-同舟云学术

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Room temperature on-wafer ballistic graphene field-effect-transistor with oblique double-gate

Published:2016-06-28 Issue:24 Volume:119 Page:244305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dragoman Mircea¹^ORCID,Dinescu Adrian¹,Dragoman Daniela²³

Affiliation:

1. National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126A, Bucharest 077190, Romania

2. Physics Faculty, University of Bucharest, P.O. Box MG-11, 077125 Bucharest, Romania

3. Academy of Romanian Scientists, Splaiul Independentei 54, 050094 Bucharest, Romania

Funder

Autoritatea Nationala pentru Cercetare Stiintifica (ANCS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4954639

Reference20 articles.

1. Ballistic carbon nanotube field-effect transistors

2. Multiwalled carbon nanotubes are ballistic conductors at room temperature

3. Effects of a High-k Dielectric on the Performance of III–V Ballistic Deflection Transistors

4. Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

5. Exceptional ballistic transport in epitaxial graphene nanoribbons

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2. Design of Ballistic MOSFET for Operation at Terahertz Frequencies;2022 IEEE 31st Microelectronics Design & Test Symposium (MDTS);2022-05-23

3. Fermi Velocity Modulation Induced Low‐Bias Negative Differential Resistance in Graphene Double Barrier Resonant Tunneling diode;Annalen der Physik;2021-09-15

4. Bloch oscillations at room temperature in graphene/h-BN electrostatic superlattices;Nanotechnology;2021-06-04

5. Nanoelectronic Devices Enriching Moore’s Law;Atomic-Scale Electronics Beyond CMOS;2020-11-17

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