Modulation bandwidth of GaAs/AlGaAs single quantum well lasers operating at the second quantized state
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100798
Reference18 articles.
1. A graded‐index waveguide separate‐confinement laser with very low threshold and a narrow Gaussian beam
2. Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities
3. High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy
4. Operating characteristics of single-quantum-well AlGaAs/GaAs high-power lasers
5. Monolithic integration of a low threshold current quantum well laser and a driver circuit on a GaAs substrate
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2. Collector characteristics and the differential optical gain of a quantum-well transistor laser;Applied Physics Letters;2007-12-10
3. Modulation Characteristics of Tunable Quantum-Well Heterolasers at the Radiation Frequency Tuning;Journal of Applied Spectroscopy;2005-07
4. Nonlinear dynamics of a directly modulated semiconductor laser with cavity detuning;Optical and Quantum Electronics;2005-05
5. Simulation of gain-switched picosecond pulse generation from quantum well lasers;Optical and Quantum Electronics;1996-11
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