Ferroelectric ordering and energy storage capacity in lead-free Ba(Zr0.2Ti0.8)O3 nanoscale film capacitors fabricated using pulsed laser deposition technique
Author:
Affiliation:
1. Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377, USA
Funder
U.S. Department of Defense
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5117170
Reference44 articles.
1. Composition-dependent dielectric and energy-storage properties of (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric thick films
2. Large enhancement of the recoverable energy storage density and piezoelectric response in relaxor-ferroelectric capacitors by utilizing the seeding layers engineering
3. Large Energy Density, Excellent Thermal Stability, and High Cycling Endurance of Lead-Free BaZr0.2Ti0.8O3 Film Capacitors
4. Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases
5. Dielectric breakdown, negative resistivity, depletion widths and the role of Bi in strontium bismuth tantalate (SBT) devices
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1. Enhancing energy storage efficiency in lead-free dielectric ceramics through relaxor and lattice strain engineering;Journal of Materiomics;2024-01
2. Effect of sputtering-target composition on the structure, dielectric, ferroelectric, and energy storage properties of highly (00l)-oriented Ba(ZrxTi1–x)O3 films;Journal of Vacuum Science & Technology B;2023-06-29
3. Review on energy storage in lead‐free ferroelectric films;Energy Storage;2022-05-24
4. Enhanced energy storage capability of (1-x)Na0.5Bi0.5TiO3-xSr0.7Bi0.2TiO3 free-lead relaxor ferroelectric thin films;Ceramics International;2020-07
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