Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference17 articles.
1. Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”
2. Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon
3. Defect characterization in silicon particle detectors irradiated with Li ions
4. Development of transient current and charge techniques for the measurement of effective net concentration of ionized charges (Neff) in the space charge region of p-n junction detectors
5. The Cryogenic Transient Current Technique (C-TCT) measurement setup of CERN RD39 Collaboration
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. In situ characterization of radiation sensors based on GaN LED structure by pulsed capacitance technique and luminescence spectroscopy;Sensors and Actuators A: Physical;2017-11
2. Profiling of Current Transients in Capacitor Type Diamond Sensors;Sensors;2015-06-08
3. Simulations of Operation Dynamics of Different Type GaN Particle Sensors;Sensors;2015-03-05
4. Profiling of the injected charge drift current transients by cross-sectional scanning technique;Journal of Applied Physics;2014-02-07
5. Currents Induced by Injected Charge in Junction Detectors;Sensors;2013-09-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3