Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3531996
Reference44 articles.
1. Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields
2. Nitride-based semiconductors for blue and green light-emitting devices
3. GaN-based waveguide devices for long-wavelength optical communications
4. Conversion of Direct to Indirect Bandgap and Optical Response of B Substituted InN for Novel Optical Devices Applications
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