Spin-polarized tunneling in metal-insulator-semiconductor Fe∕ZnSe∕Ga1−xMnxAs magnetic tunnel diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2399364
Reference20 articles.
1. Spintronics: Fundamentals and applications
2. Tunnel transistor
3. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
4. Large Tunneling Magnetoresistance in GaMnAs/AlAs/GaMnAs Ferromagnetic Semiconductor Tunnel Junctions
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2. Noncollinear magnetoresistance of trilayers consisting of two ferromagnetic GaMnAs layers and a nonmagnetic GaAs:Be spacer;Journal of Crystal Growth;2019-04
3. Magneto-Transport Behaviors of (Ga,Mn)As Based Nano-structures and Devices;Handbook of Spintronics;2016
4. Magnetotransport Behaviors of (Ga,Mn)As-Based Nanostructures and Devices;Handbook of Spintronics;2015
5. Tunneling magnetoresistance from non-collinear alignment of magnetization in Fe/GaAlAs/GaMnAs magnetic tunnel junctions;Applied Physics Letters;2013-05-27
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