Piezoresistance behaviors of ultra-strained SiC nanowires
Author:
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4769217
Reference23 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Silicon carbide MEMS for harsh environments
3. Analysis of piezoresistance inn-type β-SiC for high-temperature mechanical sensors
4. P-type 3C-SiC nanowires and their optical and electrical transport properties
5. Nanobeam Mechanics: Elasticity, Strength, and Toughness of Nanorods and Nanotubes
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