Electron band bending of polar, semipolar and non-polar GaN surfaces-Reference-Cited by-同舟云学术

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Electron band bending of polar, semipolar and non-polar GaN surfaces

Published:2016-03-14 Issue:10 Volume:119 Page:105303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bartoš I.¹^ORCID,Romanyuk O.¹,Houdkova J.¹,Paskov P. P.²³^ORCID,Paskova T.²,Jiříček P.¹

Affiliation:

1. Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 53 Prague, Czech Republic

2. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27606, USA

3. Department of Physics, Chemistry and Biology, Linkoping University, S 581 83 Linkoping, Sweden

Funder

Academy of Sciences of the Czech Republic

National Science Foundation (NSF)

Energimyndigheten (Swedish Energy Agency)

Grantová Agentura České Republiky (GACR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/jap/119/10/1.4943592.pdf?itemId=/content/aip/journal/jap/119/10/10.1063/1.4943592&mimeType=pdf&containerItemId=content/aip/journal/jap

Reference37 articles.

1. Drastic Decrease in Dislocations during Liquid Phase Epitaxy Growth of GaN Single Crystals Using Na flux Method without Any Artificial Processes

2. GaN-based heterostructures for sensor applications

3. Electronic Biosensors Based on III-Nitride Semiconductors

4. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

5. Accurate calculation of polarization-related quantities in semiconductors

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1. Recent advances in micro-pixel light emitting diode technology;Applied Physics Reviews;2024-05-16

2. The determination of WSe2/GaN heterojunction band offsets in the semipolar (11–22) and nonpolar (11–20) planes by x-ray photoelectron spectroscopy;Applied Physics Letters;2024-04-22

3. Ideal Vacuum-Based Efficient and High-Throughput Computational Screening of Type II Heterojunctions;ACS Applied Materials & Interfaces;2023-11-29

4. The GaN(0001) yellow-luminescence-related surface state and its interaction with air;Surfaces and Interfaces;2023-06

5. Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro‐LEDs;Advanced Optical Materials;2023-03-17

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