Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119114
Reference18 articles.
1. Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
2. InAs-GaAs quantum dots: From growth to lasers
3. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
4. Nature of optical transitions in self-organized InAs/GaAs quantum dots
5. InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si
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2. Growth technique and effect of post growth annealing on the optical properties of In(Ga)As/GaAs quantum dot heterostructures;SPIE Proceedings;2016-09-15
3. Growth strategy to achieve mono-modal quantum dot size distribution in InAs/GaAs multi stack coupled heterostructures;SPIE Proceedings;2016-03-15
4. Molecular Beam Epitaxy: An Overview;Reference Module in Materials Science and Materials Engineering;2016
5. Optical effects of Si-delta doping of GaAs spacer layer on the vertical coupled multi-stacked InAs/InGaAs/GaAs intermediate-band solar cells;International Journal of Nanotechnology;2015
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