Optical properties of vapor‐grown Inx Ga1−xAs epitaxial films on GaAs and Inx Ga1−xP substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1662976
Reference22 articles.
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3. 3-5 compound photocathodes: A new family of photoemitters with greatly improved performance
4. Radiative recombination from GaAs directly excited by electron beams
5. Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence
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1. As-Ga-In (Arsenic-Gallium-Indium);Non-Ferrous Metal Systems. Part 1;2006
2. Liquid-phase epitaxy of highly-lattice-mismatched InxGa1−xAs layers on (001)GaAs substrates;Materials Letters;1994-02
3. References;Thin Films by Chemical Vapour Deposition;1990
4. Low-dislocation indium-alloyed GaAs;Journal of Crystal Growth;1984-12
5. Factors Influencing the Growth of Ga0.47In0.53As on InP Substrates Using the Metalorganic Process;Journal of The Electrochemical Society;1982-02-01
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