Effect of sub-bandgap illumination on the internal electric field of CdZnTe-Reference-Cited by-同舟云学术

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Effect of sub-bandgap illumination on the internal electric field of CdZnTe

Published:2011-10 Issue:7 Volume:110 Page:073708
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Washington Aaron L.,Teague Lucile C.,Duff Martine C.,Burger Arnold,Groza Michael,Buliga Vladimir

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3638443

Reference19 articles.

1. Cadmium zinc telluride and its use as a nuclear radiation detector material

2. Electric field distributions in CdZnTe due to reduced temperature and x-ray irradiation

3. Internal Electric-Field-Lines Distribution in CdZnTe Detectors Measured Using X-Ray Mapping

4. Internal Electric Field Investigations of a Cadmium Zinc Telluride Detector Using Synchrotron X-ray Mapping and Pockels Effect Measurements

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Deep-Level Defects on the Current Distortion of CZT γ -Ray Detector Under Temporal Response;IEEE Transactions on Nuclear Science;2024-05

2. Investigation of the Influence of Infrared Illumination on the Pulse Shapes of Output Signals of CdZnTe Detectors;Sensors;2023-12-16

3. Investigation of internal electric fields in graphene/6H-SiC under illumination by the Pockels effect;Optics Express;2023-09-26

4. Influence of sub-bandgap illumination on electric field distribution at grain boundary in CdZnTe crystals;Acta Physica Sinica;2022

5. Effect of deep level defects on CdZnTe detector internal electric field and device performance;Journal of Applied Physics;2021-11-28

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