High power light emission of IV–VI lead salt multiple-quantum-well structure grown by molecular-beam epitaxy on 〈111〉 BaF2 substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1540238
Reference7 articles.
1. Fast recombination processes in lead chalcogenide semiconductors studied via transient optical nonlinearities
2. Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation
3. Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells
4. IV–VI compound midinfrared high-reflectivity mirrors and vertical-cavity surface-emitting lasers grown by molecular-beam epitaxy
5. Low-threshold optically pumped λ=4.4 μm vertical-cavity surface-emitting laser with a PbSe quantum-well active region
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