Deep state in the bandgap and photoluminescence of Zn1−xMnxO-Reference-Cited by-同舟云学术

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Deep state in the bandgap and photoluminescence of Zn1−xMnxO

Published:2021-01 Issue:1 Volume:47 Page:32-38
ISSN:1063-777X
Container-title:Low Temperature Physics
language:en
Short-container-title:Low Temperature Physics

Author:

Sokolov V. I.¹^ORCID,Gruzdev N. B.¹^ORCID,Churmanov V. N.²^ORCID,Menshenin V. V.¹^ORCID,Emelchenko G. A.³^ORCID

Affiliation:

1. M. N. Miheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences, Ekaterinburg 620108, Russia

2. Ural Federal University, Ekaterinburg 620002, Russia

3. Institute of Solid State Physics of the Russian Academy of Sciences Chernogolovka, Moscow 142432, Russia

Publisher

AIP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/10.0002895

Reference19 articles.

1. On the Nature of the Magnetism-Promoting States in Dilute Magnetic Semiconductor and Oxide Thin Films

2. Charge-transfer absorption band in Zn1−xMxO (M: Co, Mn) investigated by means of photoconductivity, Ga doping, and optical measurements under pressure

3. Mid-gap electronic states inZn1−xMnxO

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